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第78期:Advanced quantum dot and photonic crystal technologies for integrated nano-photonic circuit

2008-05-28
    应我所杨涛研究员的邀请,日本国家材料研究所的Kiyoshi Asakawa教授将于5月29日上午来所学术交流,并在“黄昆半导体科学技术论坛”上作第78期报告。欢迎广大科研人员及研究生积极参加。

    报告题目: Advanced quantum dot and photonic crystal technologies for integrated nano-photonic circuit

    报告人: Prof. Kiyoshi Asakawa(National Institute of Materials Science (NIMS) & University of Tsukuba, Tsukuba, Japan)

    时间: 2008年5月29日(星期四) 上午 9:30

    地点: 中科院半导体研究所学术会议中心

    Abstract:Two kinds of nano-photonic technologies, i.e., GaAs-based two dimensional photonic crystal (2DPC) slab waveguides (WGs) and InAs-based quantum dots (QDs) were developed for key photonic device structures in the future advanced telecommunication systems. For an ultra-fast digital photonic network, an ultra-small and ultra-fast symmetrical Mach–Zehnder (SMZ)-type all-optical switch (PC-SMZ) has been developed in the first stage. In the second stage, the PC-SMZ is now evolving into a new functional key device, i.e., an ultra-fast all-optical flip-flop (PC-FF) device that is essential for the digital photonic network. Through the two stages, two important techniques were developed so far. One is a new simulation method, i.e., topology optimization method of 2DPC WGs with wide/flat bandwidth, high transmittance and low reflectivity. Another is a new selective-area-growth method, i.e., metal-mask MBE method of InAs QDs. This technique contributes to achieving high-density and highly uniform InAs QDs in a desired area such as an optical nonlinearity-induced phase shift arm in the PC-FF. For a quantum information system, a single photon qubit composed of a QD ensemble, or desirably single QD, embedded in a PC-based high-Q cavity has been studied as an application of the PC/QD-combined nano-photonics. Purcell effect specific to the photon-localized system has been observed so far. As a unique site-controlled QD technique, a nano-jet probe (NJP) method has also been developed for positioning a single QD at the centre of the PC high-Q cavity. All these results will pave the way for implementation of innovative photonic devices in the advanced ultra-fast photonic network system.

    Kiyoshi Asakawa分别于1968年和1992年在东京大学获得学士和博士学位,1968年加入NEC中央研究所,1988年成为NEC光电技术研究所基础研究部部长,1993年成为主席研究员,1996年成为飞秒技术研究所(FESTA)统括group leader,2004年成为筑波大学TARA中心教授,和2008年成为日本国家材料研究所(NIMS)董事。其间,他还担任过美国UCSB的客员研究员(1987-1988),日本北海道大学(1998,2001)和筑波大学(1993-2002)的客员教授。Asakawa 教授的研究领域主要涉及半导体光电子学,特别是近年主要集中在半导体纳米光子学,包括半导体纳米结构、纳米加工技术和纳米器件。迄今,他已在重要的国际学术期刊 (PRL, APL, PRB和Nature Physics等) 上发表论文139篇,出版学术专著7部,国际会议上作报告200次(其中70个大会邀请报告)。此外,他还获得多项国内和国际学术奖,多次担任国际大会的组织委员。

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