日本北海道大学的Junichi Motohisa教授应我所超晶格室吴南健研究员的邀请将于9月4日来我所学术交流，并在“黄昆半导体科学技术论坛”上作103期报告，望广大科研人员及研究生准时参加!

　  报告题目: Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications

　  报告人:  Prof. Junichi Motohisa(Research Center for Integrated Quantum Electronics, Hokkaido University)

　  报告时间: 2009年9月4日(星期五)下午15:00

　  报告地点: 中国科学院半导体研究所一号楼学术沙龙室

　  Abstract:Semiconductor nanowires have stimulated extensive interest in recent years because of their unique properties and potential applications as building blocks for nanoscale electronic and photonic devices. So far, most of the nanowires have been grown by catalyst-assisted vapor-liquid-solid growth mechanism. We have been reporting on the systematically controlled growth of III-V compound semiconductor nanowire arrays by catalyst-free selective area metalorganic vapor phase epitaxy (SA-MOVPE) on partially masked substrates <1-3>. The length, diameter, shape and position of the nanowires were precisely controlled by optimization of the growth conditions and mask patterning. Manipulation of the growth conditions, particularly with a combination of the growth of heterostructures, also enabled us to deliberately define the nanowire growth along either the axial or the radial direction, which has significant potential for the realization of novel nanostructures containing heterostructures. Very recently, we have succeeded in the growth of III-V nanowires on Si <4,5>, opening up a possibility of integration of III-V devices on Si platforms.The grown nanowires are used for realize various kind of devices. To date, we have demonstrated FETs using lay-down nanowires <6>. We also have shown that the nanowires with core-shell heterostrutures exhibits lasing under plused light excitations with specific interference patterns <7>. More recently, the as-grown nanowire arrays are used for photovoltaic devices, which exhibited conversion efficiency of 3.37 % under AM 1.5G irradiation <8>.

　  <1> J. Motohisa et al., J. Cryst. Growth 272, 180 (2004).

　  <2> P. Mohan et al., 16, 2903 (2005).

　  <3> K. Tomioka et al., J. Cryst. Growth 298, 644 (2007).

　  <4> K. Tomioka et al., Nano Lett. 8, 3475 (2008).

　  <5> K. Tomioka et al., Nanotechnology 20, 145302 (2009).

　  <6> J. Noborisaka et al., Jpn. J. Appl. Phys 46, 7562 (2007).

　  <7> B. Hua et al., Nano Lett. 9, 112 (2009).

　  <8> H. Goto et al., Appl. Phys. Exp. 2, 035004 (2009).