德国哈根大学Hagen University的W. R. Fahrner教授应我所材料重点实验室王占国院士的邀请将于9月9日来我所学术交流，并在“黄昆半导体科学技术论坛”上作104期报告，望广大科研人员及研究生准时参加!

　　报告题目: High Efficiency a-Si/c-Si Heterojunction Solar Cells

　　报告人: Prof. Dr. W. R. Fahrner, Chair of Electronic Devices, Hagen University, Germany

　　报告时间：2009年9月9日(星期三)上午10:30

　　报告地点: 中国科学院半导体研究所走廊学术沙龙室107

　　High Efficiency a-Si/c-Si Heterojunction Solar Cells

　　W. R. Fahrner

　　Chair of Electronic Devices, Hagen University, Germany

　　Abstract

　　The talk starts with a general survey on the properties of heterojunction solar cells. The structure, composition, and the functions of the various layers are discussed. Point by point the numerous challenges are tackled. It is known that surface states have a detrimental impact on the performance. Thus two independent measurement techniques, a direct and an indirect one, have been developed in order to determine the surface state density and the capture cross sections. An appropriate texture is mandatory for suppression of the reflection. A reasonable tool for this purpose is etching by TMAH (Tetra Methyl Ammonium Hydroxide). Another issue is the formation of an epitaxial interface layer instead of an amorphous one. This must be prevented by avoiding deposition temperatures above 200° C. Passivation of the surfaces is done by means of intrinsic a-SiO:H layers annealed at 250° C. Our (micromorphous) emitter is deposited below this temperature at a high hydrogen dilution.

　　The talk is accompanied by a brief introduction into the distance teaching system of the University of Hagen (the national distance teaching university of Germany).

　　Prof. Dr. W. R. Fahrner简历

　　Prof. Dr. Wolfgang R. Fahrner received his degree in physics from the University of Freiburg, Germany, in 1970. From 1970 to 1977, he was employed by the Institute of Applied Solid State Physics of the Fraunhofer Society in Freiburg. His main subject was the effect of ion implantation in MOS devices. In 1973, he received his Ph.D. degree. In 1973 and 1974, he was given a sabbatical research stay at IBM East Fishkill, N.Y. In 1977, he joined the Hahn-Meitner Institute, Berlin, where he investigated radiation effects in electronic devices. In 1984 and 1985, he again worked for IBM, East Fishkill. In 1988, he was appointed full professor at the University of Hagen, where he now heads the chair of electronic devices. His main activities are solar cell technology, thermoelectrical devices, and hydrogen-silicon interaction.

　　Prof. Fahrner has authored or co-authored more than 800 reviewed papers, 15 patents and nine books. He is a member of the Electrochemical Society and of the German Physical Society and a senior member of the IEEE.