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第112期:InP-Based Photonic Integrated Devices

2010-06-18

美国贝尔实验室的Liming Zhang博士将于11月12日上午来我所学术交流,并在“黄昆半导体科学技术论坛”上作第112期报告,望相关领域的科研人员及研究生准时参加!

报告题目: InP-Based Photonic Integrated Devices

报告人: Dr. Liming Zhang(Bell Labs,USA)

时间: 2009年11月12日(星期四) 上午 10:00

地点: 中国科学院半导体研究所学术会议中心

Abastract: InP and its compounds are direct bandgap material which make them ideal for many optical components such as laser, modulator and detector. Inter-connect these optical components with low loss InP passive waveguide, it is possible to make multifunction high performance monolithic integrated devices. In this talk, some of recent works on our monolithic integrated photonic circuits (PIC) are reviewed. A compact DQPSK transmitter and receiver both capable of operating at 107Gb/s will be presented. A novel DP-OOK modulator with a simple and robust design and performance at 80Gb/s is demonstrated. A single chip EAM modulator integrated with tunable optical dispersion compensator will be presented. The integrated devices expanded the dispersion tolerance range from ~80 to ~280 ps/nm. Finally, a monolithic integrated circuit is demonstrated. The chip integrated wavelength converter and a rapidly tunable wavelength laser to construct a wavelength-switching element. The device can operate at 40Gb/s with 0.5ns wavelength switch.

报告人简介:Biography: Dr. Liming Zhang received Ph.D. degrees in Electrical Engineering from Strathclyde University, UK in 1990. He worked as research associate at Cambridge University, UK from 1990 to 1993. In 1993 he joined Bell Laboratories of Alcatel-Lucent, where he has been investigating photonic integrated circuits in III-V semiconductor material structures for applications in optical communication systems. His research interests also include non-linear semiconductor optical amplifier and quantum dots.

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