Abstract: Recent progress in the fabrication technology of semiconductor nanostructures has made possible observations of novel electrical and optical properties of silicon/germanium quantum dots and nanowires, such as single electron tunneling, ballistic transport, visible photo- luminescence, high-efficiency electron emission. Their promising applications include advanced field-effect transistors, non-volatile memories, tunnel transistors，sensors, quantum information devices and photovoltaic devices. Nanocrystalline silicon (nc-Si) particles with size less than 10 nm were prepared by VHF plasma-enhanced decomposition of silane gas. Pulsed gas plasma processing, in which the nucleation and the growth period were controlled precisely, was turned out to be effective for the preparation of monodispersed nanocrystalline silicon particles. High density integration and assembly of Si nanodots are investigated using solution methods. Electron transport in coupled Si quantum dots prepared by EB lithography is also investigated in detail. We observed characteristic transport of triple quantum dots and successfully controlled electrostatic coupling of electrons using gate electrodes. Precise control of charge states in the multiple-coupled quantum dots is essential for spin based quantum information processing. We also observed spin-blockade in coupled Si dots. The growth of germanium nanowires by a vapor-liquid-solid chemical vapor deposition method at 260 °C was also discussed in the presentation. The nanowire has a diameters less than 5 nm – smaller than the de Broglie wavelength of the carriers in semiconductors– thus affecting electrical transport via quantum confinement phenomena. 

　　Biography: Shunri Oda is a Professor in Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology. He is a Fellow of IEEE and a Distinguished Lecturer of the IEEE Electron Devices Society. He is a member of the Electrochemical Society, the Materials Research Society, and a Fellow of the Japan Society for Applied Physics. He received his B. Sc degree in physics, the M. Eng. and Dr. Eng. degree from Tokyo Institute of Technology in 1974, 1976 and 1979, respectively.  His current research interests include fabrication of silicon quantum dots by pulsed plasma processes, single electron tunneling devices based on nanocrystalline silicon, ballistic transport in silicon nanodevices, silicon based quantum information devices, and NEMS hybride devices. He has authored more than 550 technical papers in international journals and conferences including 150 invited papers. He edited a book (with D. Ferry) “Silicon Nanoelectronics” (CRC Press, 2006).