High performance continuous-waveInP-based 2.1 mu m superluminescent diode with InGaAsSb quantum well and cavity structure suppression
2018-11-01
High performance continuous-waveInP-based 2.1 mu m superluminescent diode with InGaAsSb quantum well and cavity structure suppression
Authors: Wang, DB; Zhang, JC; Hou, CC; Zhao, Y; Cheng, FM; Jia, XF; Zhai, SQ; Zhuo, N; Liu, JQ; Liu, FQ; Wang, ZG
APPLIED PHYSICS LETTERS
Volume: 113 Issue: 16 Published: OCT 15 2018 Document type: Article
DOI: 10.1063/1.5052056
全文链接:https://aip.scitation.org/doi/10.1063/1.5052056