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Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y2O3/HfO2 layers

2018-11-09

Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y2O3/HfO2 layers
Authors: Li, T; Shen, R; Sun, M; Pan, D; Zhang, JM; Xu, J; Zhao, JH; Chen, Q
NANOSCALE
Volume: 10 Issue: 39 Published: OCT 21 2018 Document type: Article
DOI: 10.1039/c8nr05680c
全文链接:https://pubs.rsc.org/en/content/articlelanding/2018/nr/c8nr05680c

 

 



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