Author(s): Song, JW (Song, Jinwen); Yuan, S (Yuan, Shuai); Cui, CC (Cui, Chengcong); Wang, YX (Wang, Yuxi); Li, ZY (Li, Zhiyong); Wang, AX (Wang, Alan X.); Zeng, C (Zeng, Cheng); Xia, JS (Xia, Jinsong)

Source: NANOPHOTONICS Volume: 10 Issue: 3 Pages: 1081-1087 DOI: 10.1515/nanoph-2020-0455 Published: MAR 2021

Abstract: High-efficiency and high-speed photodetectors with broadband responses are playing pivotal roles for wavelength-division multiplexing optical communications. Germanium photodetectors on silicon platforms exhibit potential cost advantage due to the compatibility for monolithic integration with silicon-based electronic circuits for signal amplification and processing. In this article, we report a normal incidence, germanium photodetector enabled by guided-mode resonances in photonic crystal, which successfully resolved the compromise between quantum efficiency, wavelength coverage and bandwidth requirement, a drawback usually faced by conventional photodetectors operating at normal incidence. The resonant photonic crystal structure is designed to support multiple resonances in the target wavelength range. With an intrinsic absorption layer thickness of 350 nm, the device achieved a high external quantum efficiency of 50% at 1550 nm, along with an enhancement around 300% for the entire C-band. Using a mesa diameter of 14 mu m, the fabricated device exhibited a 3-dB bandwidth of 33 GHz and obtained clear eye diagrams at bit rate up to 56 Gbps. This work provides a promising method to design high-efficiency, high-speed, normal incidence germanium photodetectors for optical interconnect systems.

Accession Number: WOS:000626153900005

ISSN: 2192-8606

eISSN: 2192-8614

Full Text: https://www.degruyter.com/document/doi/10.1515/nanoph-2020-0455/html