Author(s): Zhao, XP (Zhao, Xupeng); Mao, SW (Mao, Siwei); Wang, HL (Wang, Hailong); Wei, DH (Wei, Dahai); Zhao, JH (Zhao, Jianhua)

Source: APPLIED PHYSICS LETTERS Volume: 118 Issue: 9 Article Number: 092401 DOI: 10.1063/5.0024109 Published: MAR 1 2021

Abstract: Current-induced magnetization switching plays an essential role in spintronic devices exhibiting nonvolatility, high-speed processing, and low-power consumption. Here, we report on the spin-orbit torque-induced magnetization switching in perpendicularly magnetized L1(0)-MnGa/FeMn/Pt trilayers grown by molecular-beam epitaxy. An antiferromagnetic FeMn layer is inserted between the spin current generating Pt layer and spin absorbing MnGa layer. Due to the exchange bias effect, the trilayers show field-free spin-orbit torque switching. Overall, the spin transmission efficiency decreases monotonically as the FeMn thickness increases. It is found that the spin current can be transmitted through an 8nm-thick FeMn layer as evidenced by partial switching of the L1(0)-MnGa. The damping-like spin-orbit torque efficiency shows a peak value at t(FeMn) = 1.5nm due to the enhanced interfacial spin transparency and crystalline quality of the FeMn. These results help demonstrate the efficacy of emerging spintronic devices containing antiferromagnetic elements.

Accession Number: WOS:000630483100001

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: https://aip.scitation.org/doi/10.1063/5.0024109