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Bright Field Structural Colors in Silicon-on-Insulator Nanostructures



Author(s): Li, LJ (Li, Longjie); Niu, JB (Niu, Jiebin); Shang, X (Shang, Xiao); Chen, SQ (Chen, Shengqiong); Lu, C (Lu, Cheng); Zhang, YL (Zhang, Yongliang); Shi, LN (Shi, Lina)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 13 Issue: 3 Pages: 4364-4373 DOI: 10.1021/acsami.0c19126 Published: JAN 27 2021

Abstract: Structural coloration with artificially nanostructured materials is emerging as a prospective alternative to traditional pigments for the high resolution, sustainable recycling, and long-time durability. However, achieving bright field structural colors with dielectric nanostructures remains a great challenge due to the weak scattering in an asymmetric environment. Here, we demonstrate all-dielectric bright field structural colors with diffraction-limited resolution on the silicon-on-insulator platform. The backscattering is strongly enhanced from the constructive interference between Mie resonances of individual Si antennas and Fabry-Perot resonances supported by the SiO2 layer. The fabricated colors with varying hues and saturations show strong insensitivity with respect to the interparticle spacing and, remarkably, the viewing angle under resonant conditions. Compared with creating a quasi-homogeneous environment, our strategy is solid and complementary metal-oxide semiconductor integrable, paving the way for practical applications of structural colors in nanoscale color printing, microdisplays, and imaging.

Accession Number: WOS:000614062400084

PubMed ID: 33390005

ISSN: 1944-8244

eISSN: 1944-8252

Full Text: https://pubs.acs.org/doi/10.1021/acsami.0c19126


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