In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic
Author(s): Zhong, MZ (Zhong, Mianzeng); Meng, HT (Meng, Haotong); Liu, SJ (Liu, Sijie); Yang, H (Yang, Huai); Shen, WF (Shen, Wanfu); Hu, CG (Hu, Chunguang); Yang, JH (Yang, Juehan); Ren, ZH (Ren, Zhihui); Li, B (Li, Bo); Liu, YY (Liu, Yunyan); He, J (He, Jun); Xia, QL (Xia, Qinglin); Li, JB (Li, Jingbo); Wei, ZM (Wei, Zhongming)
Source: ACS NANO Volume: 15 Issue: 1 Pages: 1701-1709 DOI: 10.1021/acsnano.0c09357 Published: JAN 26 2021
Abstract: Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.
Accession Number: WOS:000613942700138
PubMed ID: 33331154
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Hu, Chunguang S-5084-2016 0000-0001-6485-904X
Shen, Wanfu V-1933-2017 0000-0002-3932-5457
Zhong, MianZeng 0000-0003-0343-5248
ISSN: 1936-0851
eISSN: 1936-086X
