Author(s): Zhao, YT (Zhao, Yuntao); Li, GH (Li, Guanghui); Zhang, S (Zhang, Shuai); Liang, F (Liang, Feng); Zhou, M (Zhou, Mei); Zhao, DG (Zhao, Degang); Jiang, DS (Jiang, Desheng)

Source: OPTICAL MATERIALS EXPRESS Volume: 11 Issue: 5 Pages: 1411-1419 DOI: 10.1364/OME.420877 Published: MAY 1 2021

Abstract: This paper studies the influence of low-temperature GaN-cap (LT-Cap) layer thickness on the InGaN/GaN multiple quantum well (MQW) structure and the related luminescence characteristics. The research results show that the thickness variation of LT-Cap layers seems not to have a substantial impact on the structure of MQWs, i.e., the well layer thickness, but strongly affects the indium composition of well layers. The LT-Cap layer can effectively weaken the decomposition of InGaN, however, the increase in the thickness of the LT-Cap layer will lead to an increase in the polarization effect, resulting in a red shift of the emission peak. Different LT-Cap layers will affect the distribution of the tail states, resulting in an energy shift of carrier emission from the local states. In addition, the thickness variation of LT-Cap layers also affects the luminescence characteristics of MQWs. It is found that as the thickness of the LT-Cap layer increases, the internal quantum efficiency (IQE) of the material gradually decreases, which may be due to the introduction of new non-radiative recombination centers.

(c) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000651235300002

ISSN: 2159-3930

Full Text: https://www.osapublishing.org/ome/fulltext.cfm?uri=ome-11-5-1411&id=450097