Author(s): Wu, J (Wu, Jing); Hao, HM (Hao, Hui Ming); Liu, Y (Liu, Yu); Zhang, Y (Zhang, Yang); Zeng, XL (Zeng, Xiao Lin); Zhu, SB (Zhu, Shen Bo); Niu, ZC (Niu, Zhi Chuan); Ni, HQ (Ni, Hai Qiao); Chen, YH (Chen, Yong Hai)

Source: OPTICS EXPRESS Volume: 29 Issue: 9 Pages: 13829-13838 DOI: 10.1364/OE.423121 Published: APR 26 2021

Abstract: The anomalous circular photogalvanic effect (ACPGE) is observed in p-GaAs with a thickness of 2 mu m at room temperature, in which circularly polarized light is used to inject spin-polarized carriers and the spin diffusion can generate a macroscopic detectable charge current due to the inverse spin Hall effect. The normalized ACPGE signals show first increasing and then decreasing with increasing the doping concentration. The role of the doping impurities is discussed by both extrinsic and intrinsic models, and both can well explain the variation of ACPGE with the doping concentration. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000643941900085

PubMed ID: 33985111

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-29-9-13829&id=450325