Negative Magnetoresistance in the GeSn Strip
Author(s): Shu, KX (Shu, Kaixiang); Wang, N (Wang, Nan); Huo, NJ (Huo, Nengjie); Wan, FS (Wan, Fengshuo); Li, JB (Li, Jingbo); Xue, CL (Xue, Chunlai)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 13 Issue: 25 Pages: 29960-29964 DOI: 10.1021/acsami.1c06904 Published: JUN 30 2021
Abstract: Discovery of topological materials associated with an exotic phenomenon has attracted increasing attention in modern condensed matter physics. A typical example is the chiral anomaly proposed in the Dirac or Weyl semimetals. In addition to the well-known topological semimetals, such as TaAs and Na3Bi, recently, group IV GeSn alloys were also proposed to be Dirac semimetals in theory, demonstrating potential applications compatible with current Si-based technology. Here, we report the observation of large negative magnetoresistance (MR) that is sensitive to the orientation of the magnetic and electric field in the GeSn strip. This negative MR emerges only when the applied magnetic field is parallel to the electric field, which is consistent with the chiral anomaly in topological semimetals. This work paves a new way toward exploring the negative MR behavior and underlying mechanism in a new class of Dirac semimetals.
Accession Number: WOS:000670430100069
PubMed ID: 34128632
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
huo, nengjie 0000-0003-2520-6243
ISSN: 1944-8244
eISSN: 1944-8252
