Author(s): Chen, Y (Chen, Yan); Wang, XD (Wang, Xudong); Huang, L (Huang, Le); Wang, XT (Wang, Xiaoting); Jiang, W (Jiang, Wei); Wang, Z (Wang, Zhen); Wang, P (Wang, Peng); Wu, BM (Wu, Binmin); Lin, T (Lin, Tie); Shen, H (Shen, Hong); Wei, ZM (Wei, Zhongming); Hu, WD (Hu, Weida); Meng, XJ (Meng, Xiangjian); Chu, JH (Chu, Junhao); Wang, JL (Wang, Jianlu)

Source: NATURE COMMUNICATIONS Volume: 12 Issue: 1 Article Number: 4030 DOI: 10.1038/s41467-021-24296-1 Published: JUN 29 2021

Abstract: Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS2 VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS2 heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS2 realizes a high-performance polarization-sensitive photodetector exhibiting low dark current of approximately 1.5 pA, quick response of 14 mu s, and high detectivity of 4.7 x 10(12) Jones. Dichroism ratios are also enhanced by ferroelectric polarization in a broad spectrum from visible to near-infrared. The ferroelectric-tuned GeSe/MoS2 van der Waals heterojunction has great potential for multifunctional detection applications in sophisticated light information sensing. More profoundly, the ferroelectric-tuned van der Waals heterojunction structure provides a valid band-engineering approach to creating versatile devices. Band alignment engineering is important to realize high performance and multifunctionality in a specific van der Waals heterojunction. Here, the authors observe band alignment transition of the heterojunction in a ferroelectric-tuned van der Waals heterojunction device with high performance.

Accession Number: WOS:000671754800003

PubMed ID: 34188060

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Shen, Hong         B-6006-2008         0000-0001-6283-6506

ISSN: 2041-1723

Full Text: https://www.nature.com/articles/s41467-021-24296-1