All-Electrical Multifunctional Spin Logics by Adjusting the Spin Current Density Gradient in a Single Device
Author(s): Li, RZ (Li, Runze); Li, YC (Li, Yucai); Sheng, Y (Sheng, Yu); Bekele, ZA (Bekele, Zelalem Abebe); Wang, KY (Wang, Kaiyou)
Source: ACS APPLIED ELECTRONIC MATERIALS Volume: 3 Issue: 6 Pages: 2646-2651 DOI: 10.1021/acsaelm.1c00248 Published: JUN 22 2021
Abstract: Spin logic devices are of great interest due to their potential applications in constructing logic-in-memory computing architectures. Spin-orbit torque (SOT)-induced magnetization switching offers the prospect of multifunctional and nonvolatile spin logic devices. Here, we experimentally demonstrate the field-free current-induced magnetization switching of a multiterminal perpendicular magnetic anisotropy (PMA) device, where the switching chirality can be controlled electrically by adjusting the spin current density gradient. By programming the initial magnetization states and the switching chirality, four typical Boolean logic gates (NAND, NOR, AND, and OR) are demonstrated in a single device. The multifunctional and nonvolatile spin logic devices in this work provide a feasible way toward the application of spintronics in logic circuits and pave the way to logic-in-memory computing architectures.
Accession Number: WOS:000665655800024
eISSN: 2637-6113
