Author(s): He, HH (He, Huihui); Yang, SY (Yang, Shenyuan)

Source: CHINESE PHYSICS B Volume: 31 Issue: 1 Article Number: 017104 DOI: 10.1088/1674-1056/ac00a0 Published: JAN 1 2022

Abstract: Using first-principles calculations based on density functional theory, we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas (2DHG) in AlN/GaN superlattices. We show that the increase of in-plane lattice constant would increase the concentration of 2DHG at interfaces and decrease the valence band offset, which may lead to a leak of current. Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer, resulting in better confinement of 2DHG at AlN/GaN interfaces. Therefore, a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2DHG at AlN/GaN interfaces. Our study could serve as a guide to control the properties of 2DHG at III-nitride interfaces and help to optimize the performance of p-type nitride-based devices.

Accession Number: WOS:000739649900001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac00a0