Author(s): Xie, SH (Xie, Shihong); Shiffa, M (Shiffa, Mustaqeem); Shiffa, M (Shiffa, Mujahid); Kudrynskyi, ZR (Kudrynskyi, Zakhar R.); Makarovskiy, O (Makarovskiy, Oleg); Kovalyuk, ZD (Kovalyuk, Zakhar D.); Zhu, WK (Zhu, Wenkai); Wang, KY (Wang, Kaiyou); Patane, A (Patane, Amalia)

Source: NPJ 2D MATERIALS AND APPLICATIONS Volume: 6 Issue: 1 Article Number: 61 DOI: 10.1038/s41699-022-00338-0 Published: SEP 8 2022

Abstract: Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) light are still limited by the physical properties of the semiconductors used, such as the small penetration depth of UV light in silicon. Van der Waals (vdW) semiconductors and their pn-junctions can offer an alternative solution due to their optical properties and thin pnjunction region. Here, we report on a multi-layer junction that combines single layer graphene and vdW semiconductors (p-GaSe and n-In2Se3) with strong optical absorption in the UV range. The junctions have broadband spectral response (0.3-1.0 mu m) and high photoresponsivity under forward and reverse bias, or without any externally applied voltage. The photoresponse differs from that of a traditional pn-junction diode as it is governed by charge transport across thin layers and light-current conversion at three vdW interfaces (e.g. the graphene/GaSe, GaSe/In2Se3 and In2Se3/graphene interfaces). The type-II band alignment at the GaSe/In2Se3 interface and electric field at the three vdW interfaces are beneficial to suppress carrier recombination for enhanced photoresponsivity (up to similar to 10(2) A/W) and detectivity (up to similar to 10(13) Jones), beyond conventional UV-enhanced silicon detection technology.

Accession Number: WOS:000852402100002

eISSN: 2397-7132

Full Text: https://www.nature.com/articles/s41699-022-00338-0