Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering
Author(s): Qu, PF (Qu, Pengfei); Jin, P (Jin, Peng); Zhou, GD (Zhou, Guangdi); Wang, Z (Wang, Zhen); Wu, J (Wu, Ju); Wang, ZG (Wang, Zhanguo)
Source: SURFACE & COATINGS TECHNOLOGY Volume: 456 Article Number: 129267 DOI: 10.1016/j.surfcoat.2023.129267 Early Access Date: JAN 2023 Published: MAR 15 2023
Abstract: High-quality (100)-oriented yttria-stabilized zirconia (YSZ) films with uniform thickness were epitaxially grown on silicon substrates by a two-step process of pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RFS). First, we fabricated a YSZ-seed layer on (001)-oriented silicon substrates using a PLD apparatus, and then transferred the YSZ-seed substrate to an RFS equipment to complete the growth of a thicker YSZ film. The dependence of YSZ crystal quality on RFS-growth temperature was investigated in the range of 200 to 850 degrees C. All the resulting YSZ films exhibited pure (100) orientation, and the full width at half maximum of the YSZ (200) X-ray rocking curve was as low as 0.64 degrees for the YSZ film grown at 850 degrees C, and increased to 1.02 degrees with the RFS-growth temperature declining to 200 degrees C. The results evidenced that the YSZ film can be epitaxially grown at 200 degrees C in the presence of a YSZ-seed layer. However, the splitting of the YSZ (200) X-ray diffraction peak appeared at 500 degrees C and 200 degrees C, which may be attributed to a transformation of the intrinsic stress in the YSZ films from compressive to tensile stress with decreasing temperature. In addition, the YSZ film had a uniform thickness distribution with an inhomogeneity of less than 5 % and a very flat and dense surface with root-meansquare surface roughness below 1 nm.
Accession Number: WOS:000926207100001