Author(s): Wang, S (Wang, Shuai); Lv, ZR (Lv, Zun-Ren); Yang, QL (Yang, Qiu-Lu); Wang, SL (Wang, Sheng-Lin); Chai, HY (Chai, Hong-Yu); Meng, L (Meng, Lei); Lu, D (Lu, Dan); Ji, C (Ji, Chen); Yang, XG (Yang, Xiao-Guang); Yang, T (Yang, Tao)
Source: LASER & PHOTONICS REVIEWS DOI: 10.1002/lpor.202200979 Early Access Date: JUN 2023
Abstract: Single-frequency semiconductor lasers represent a critical role in optical communications, light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom-like quantum dot (QD) materials and advanced lateral gratings, a high-power, ultra-low-noise 1.3 & mu;m InAs/GaAs QD distributed feedback laser is demonstrated. Stable single-longitudinal-mode output power of 100 mW from 25 celcius to 85 celcius is achieved with a maximum side mode suppression ratio of 62.6 dB, and the variations of threshold current and slope efficiency over the temperature range are slight, indicting a high temperature stability. A
Record-narrow intrinsic linewidth of 1.62 kHz is achieved at 55 celcius with a white noise level of merely 515 Hz(2) Hz(-1), and a minimum averaged relative intensity noise of only -166 dB/Hz between 0.1 GHz and 20 GHz is obtained at 25 celcius. Furthermore, a strong tolerance to external optical feedback (& rang; -14 dB) is demonstrated in the range from 25 celcius to 85 celcius, with a maximum value of -8 dB at 85 celcius. This high-quality single-frequency laser fabricated with simplified processes and compact size paves the way for its future large-scale applications such as high-capacity optical communication, high-precision optical detection, high-speed optical interconnections, etc.
Accession Number: WOS:001018560500001