Author(s): Madigawa, AA (Madigawa, Abdulmalik A.); Donges, JN (Donges, Jan N.); Gaál, B (Gaal, Benedek); Li, SL (Li, Shulun); Jacobsen, MA (Jacobsen, Martin Arentoft); Liu, HQ (Liu, Hanqing); Dai, DY (Dai, Deyan); Su, XB (Su, Xiangbin); Shang, XJ (Shang, Xiangjun); Ni, HQ (Ni, Haiqiao); Schall, J (Schall, Johannes); Rodt, S (Rodt, Sven); Niu, ZC (Niu, Zhichuan); Gregersen, N (Gregersen, Niels); Reitzenstein, S (Reitzenstein, Stephan); Munkhbat, B (Munkhbat, Battulga)

Source: ACS PHOTONICS DOI: 10.1021/acsphotonics.3c01368  Early Access Date: FEB 2024  

Abstract: The realization of efficient quantum light sources relies on the integration of self-assembled quantum dots (QDs) into photonic nanostructures with a spectral alignment high spatial positioning accuracy. In this work, we present a comprehensive investigation of the QD position accuracy, obtained using two marker-based QD positioning techniques, photoluminescence (PL) and cathodoluminescence (CL) imaging, as well as using the marker-free in situ electron beam lithography (in situ EBL) technique. We employ four PL imaging configurations with three different image processing approaches and compare them with CL imaging. We fabricate circular mesa structures based on the obtained QD coordinates from both PL and CL image processing to evaluate the final positioning accuracy. This yields final position offset of the QD relative to the mesa center of mu(x) = (-40 +/- 58) nm and mu(y) = (-39 +/- 85) nm with PL imaging and mu(x) = (-39 +/- 30) nm and mu(y) = (25 +/- 77) nm with CL imaging, which are comparable to the offset mu(x) = (20 +/- 40) nm and mu(y) = (-14 +/- 39) nm obtained using the in situ EBL method. We discuss the possible causes of the observed offsets, which are significantly larger than the QD localization uncertainty obtained from simply imaging the QD light emission from an unstructured wafer. Our study highlights the influences of the image processing technique and the subsequent fabrication process on the final positioning accuracy for a QD placed inside a photonic nanostructure.

Accession Number: WOS:001174456800001

ISSN: 2330-4022