Author(s): Sheng, MW (Sheng, Meng-Wei); Hao, YZ (Hao, You-Zeng); Wang, W (Wang, Wei); Dong, Z (Dong, Zhong); Yang, YD (Yang, Yue-De); Xiao, JL (Xiao, Jin-Long); Huang, YZ (Huang, Yong-Zhen)

Source: OPTICS EXPRESS Volume: 32 Issue: 7  Article Number: 514686  DOI: 10.1364/OE.514686  Published Date: 2024 MAR 25 

Abstract: We demonstrated a narrow linewidth semiconductor laser based on a deep-etched sidewall grating active distributed Bragg reflector (SG-ADBR). The coupling coefficients and reflectance were numerically simulated for deep-etched fifth-order SG-ADBR, and a reflectance of 0.86 with a bandwidth of 1.04 nm was obtained by the finite element method for a 500period SG-ADBR. Then the fifth-order SG-ADBR lasers were fabricated using projection i-line lithography processes. Single-mode lasing at 1537.9 nm was obtained with a high side-mode suppression ratio (SMSR) of 65 dB, and a continuous tuning range of 10.3 nm was verified with SMSRs greater than 53 dB. Furthermore, the frequency noise power spectral density was characterized, from which a Lorentzian linewidth of 288 kHz was obtained.

Accession Number: WOS:001206984000001

PubMed ID: 38571036

Author Identifiers:

Author Web of Science ResearcherID     ORCID Number

Yang, Yuede      0000-0002-6237-2921

ISSN: 1094-4087