[黄昆论坛]第373期:Energy Harvesting by Spin Current
[黄昆论坛]第372期:Enhancement of Light Color Conversion through Nanoscal...
[黄昆论坛]第371期: 光力学中的拓扑和非互易动力学
[黄昆论坛]第370期:Recent Advances of 2D Metal-Complex Nanosheets
[黄昆论坛]第369期:High-speed optoelectronics for underwater optical wire...
[黄昆论坛]第368期:The Development of Low Noise Avalanche Photodiodes
[黄昆论坛]第367期:氧化钛纳米棒的制备以及在染料敏化太阳电池中的应用
[黄昆论坛]第366期:Valleytronics and correlated phase probed by interlaye...
[黄昆论坛]第365期:低维纳米材料的极化激元及其增强红外光谱研究
[黄昆论坛]第364期:微纳光子的高效操控与室温量子态
官方微信
友情链接

第181期:VCSEL based light sources – Challenges for application in Exascale Computing, Computer Farms and Green Photonics

2012-11-02

报告题目: VCSEL based light sources – Challenges for application in Exascale Computing, Computer Farms and Green Photonics

报告人: Dr. Werner Hofmann (Associate Professor, Institute of Solid State Physics and Center of Nanophotonics, Technical University of Berlin, Germany)

时间: 2012年11月7日(星期三) 上午 9:45

地点: 中国科学院半导体研究所学术会议中心

 Abstract: The copper-induced communication bottleneck is inhibiting performance and environmental acceptance of today´s supercomputers. Vertical-cavity surface-emitting lasers (VCSELs) are ideally suited to solve this dilemma. Indeed global players like Google, Intel, HP or IBM are now going for optical interconnects based on VCSELs. Future high-performance computers require optical interconnects with aggregated Exa-Byte/s data transport. Densely packed arrays of vertical-cavity surface-emitting lasers (VCSELs) might present the only feasible technical solution. The high-speed properties of semiconductor lasers, however, are strongly affected by their operating temperature. a self-consistent approach based on the Boltzmann transport equation in the high field regime within the device geometries, and boundary conditions. Thermal crosstalk becomes dominant when densely packed arrays of high-speed VCSELs are required. Having these applications in mind, we recently realized ultra-high speed VCSELs suited for optical interconnects in data centers with record-high performance. The 980-nm wavelength was chosen to be able to realize densely-packed, bottom-emitting devices particularly advantageous for interconnects. These devices show error-free transmission at temperatures up to 155°C. Serial data-rates of 40 Gb/s were achieved up to 75°C. Peltier-cooled devices were modulated up to 50 Gb/s. The novel VCSELs feature a new active region, a very short laser cavity, and a drastically improved thermal resistance by the incorporation of a binary bottom mirror. All device data were measured, mapped and evaluated by our fully automated probe station. These device results deliver the basis of projections of future systems. The maximum bandwidth of future VCSEL-based optical interconnects can be derived from the influence of device heating occurring in high-speed VCSEL arrays. Furthermore, the scalability of this technology and its challenges are addressed. From calculations we obtain, that VCSEL arrays are scalable from a bandwidth density of 100 Gbps/mm² with today´s devices up to a technological limit of 15 Tbps/mm².

Biography:Dr. Werner Hofmann was born in Erlenbach, Germany, in 1978. He received the Dopl. –Tng. (M.S.) degree in electrical engineering and information technology and Dr. –Ing. Degree from the Technical University of Munich (Technische Universitat Munchen), Munich, Germany, in 2003 and 2009, respectively.In 2003, he was with the Walt Schottky Institute, Technical University of Munich, where he was engaged in research on InP-based vertical-cavity surface-emitting lasers (VCSELs) including design, manufacturing and characterization. In 2009, he joined the University of California, Berkeley, via a Postdoctoral Fellowship Program granted by DAAD (German Academic Exchange Service). He is the author or coauthor of more than 60 articles (including several invited) in scientific journals, conference proceedings and books on long-wave-length VCSELs and their applications. Dr. Hofmann is a member of the Association of German Engineers (VDI) and the IEEE Photonics Society.



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明